Topic outline

  • CMOS FinFETs and GaN HEMTs have recently matured to become state-of-the art- level IC technologies.
    During this post-graduate course we will study the history and use cases, device physics, and design methodology for these new technologies.

    During the course students will give presentations and write corresponding memorandum on the topic.
    If the NDA matters are solved during this autumn, we will focus the latter part of the course on some design exercises.

    Precise course content, as well as the study methods, are agreed on together during the course.

    If you have any question, send an email to kari.stadius@aalto.fi

    Because of the NDA issues we will delay the start of the course a bit and the
    course starts on Tuesday 10.10. at 12:15 in the meeting room 2188.